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| AVD350 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2NL FLG A .025 x 45 DESCRIPTION: C 2X B OD 4x .062 x 45 The ASI AVD350 is Designed for E F G FEATURES: * Input Matching Network * * OmnigoldTM Metalization System H I J K P M N L DIM A B C D E MINIMUM inches / mm MAXIMUM inches / mm .020 / 0.51 .100 / 2.54 .376 / 9.55 .110 / 2.79 .395 / 10.03 .193 / 4.90 .450 / 11.43 .125 / 3.18 .640 / 16.26 .890 / 22.61 .395 / 10.03 .004 / 0.10 .052 / 1.32 .118 / 3.00 .030 / 0.76 .396 / 10.06 .130 / 3.30 .407 / 10.34 MAXIMUM RATINGS IC VCC PDISS TJ TSTG JC O 19.8 A 55 V 720 W @ TC = 25 C -65 C to +250 C -65 C to +200 C 0.17 OC/W O O O O F G H I J K L M N P .660 / 16.76 .910 / 23.11 .415 / 10.54 .007 / 0.18 .072 / 1.83 .131 / 3.33 .230 / 5.84 ORDER CODE: ASI10566 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE PG C IC = 10 mA IC = 25 mA TC = 25 C O NONETEST CONDITIONS RBE = 10 MINIMUM TYPICAL MAXIMUM 65 65 3.5 25 UNITS V V V mA --dB % IE = 1.0 mA VCE = 50 V VCE = 5.0 V VCC = 50 V IC = 1.0 A POUT = 350 W f = 1090 MHz 15 6.7 40 7.1 44 120 --- A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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